This paper presents a new technique to mitigate the high voltage stress on the secondary gallium nitride (GaN) transistor in a high step-up flyback application. GaN devices provide a means of achieving high efficiency at hundreds (and thousands) of kHz of switching frequency. Presently however. commercially available GaN is limited to only a 650 V absolute voltage rating. https://usoneilles.shop/product-category/mens-wetsuits/